Jingsheng Electromechanical Successfully Delivers 12-Inch Single-Wafer Silicon Carbide Epitaxial Growth Equipment

Recently, Jingsheng Mechanical & Electrical Co., Ltd. achieved a major breakthrough in the field of silicon carbide (SiC) core equipment, successfully delivering a 12-inch monolithic silicon carbide epitaxial growth equipment to Hanteng Technology, a leading global SiC epitaxial wafer manufacturer. This significant technological breakthrough will powerfully drive the silicon carbide industry chain towards larger sizes, higher efficiency, and lower costs, injecting strong momentum into my country's independent control and industrial upgrading in the global wide-bandgap semiconductor field.

As a core material for third-generation semiconductors, SiC possesses irreplaceable advantages in high-pressure, high-temperature applications such as new energy vehicles, 5G communication equipment, and AI data centers. The mature fabrication of large-size epitaxial equipment and substrates is crucial for reducing costs and driving its large-scale commercial application. From 6-inch to 8-inch and now to 12-inch SiC epitaxial growth equipment, Jingsheng Mechanical & Electrical has not only achieved continuous leaps in equipment technology, but its subsidiary, Zhejiang Jingrui SuperSiC, is also at the forefront of the industry in 6-12 inch silicon carbide substrate technology, becoming a powerful driving force for my country to gain a market advantage in the competition of strategic emerging industries.

The newly developed 12-inch monolithic SiC epitaxial equipment is compatible with 8-inch and 12-inch SiC epitaxial production. Its unique vertical split-flow gas intake scheme achieves high-precision closed-loop control of wafer surface temperature and precise zoning control of process gases. The equipment is also equipped with automated loading/unloading modules and a one-button automatic PM auxiliary function, significantly improving particle control capabilities and maintenance efficiency.

Currently, the equipment has been delivered to Hanteng Technology, a leading global SiC epitaxial wafer manufacturer, while the 12-inch substrate used is supplied by Zhejiang Jingrui SuperSiC, achieving full domestic production and collaboration. The epitaxial wafer products demonstrate excellent performance in key indicators: epitaxial layer thickness non-uniformity is controlled within 3%, doping non-uniformity within 8%, and the yield of 2mm×2mm chips is greater than 96%, reaching industry-leading levels.

In the future, Jingsheng Mechanical & Electrical will continue to uphold its mission of "building a leading enterprise in semiconductor materials and equipment and developing a green, intelligent, and high-tech manufacturing industry," adhering to innovation-driven development, and with an open and cooperative attitude, collaborating with upstream and downstream partners in the industry chain to jointly build an independent and controllable third-generation semiconductor industry ecosystem, contributing solid industrial strength to achieving high-level technological self-reliance and building a manufacturing powerhouse.